Graphene Spin Valve Devices
نویسندگان
چکیده
منابع مشابه
Observing the spin Coulomb drag in spin-valve devices
The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix—the so-called “spindrag resistivity.” It is generally quite difficult to separate the spin-drag contribution from more conventional mechanisms of resistivity. In this paper I discuss two methods to accomp...
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ژورنال
عنوان ژورنال: IEEE Transactions on Magnetics
سال: 2006
ISSN: 0018-9464,1941-0069
DOI: 10.1109/tmag.2006.878852